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| INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION INC5001AP1 is a silicon NPN epitaxial transistor designed for relay drive or Power supply application. OUTLINE DRAWING 4.6 MAX 1.6 UNIT 1.5 FEATURE Small package for easy mounting. High voltage VCEO=60V Low VCE(sat) VCEsat=0.25V max@IC=500mA/ IB=50mA High collector dissipation PC=500mW 0.8 MIN High collector current IC=1A E C 0.53 MAX B 4.2 MAX 2.5 0.4 0.48 MAX 1.5 APPLICATION Relay drive, power supply for audio equipment, VTR, etc 3.0 MARKING TERMINAL CONNECTOR : EEMITTER : CCOLLECTOR : BBASE EIAJ : SC-62 JEDEC : JEDEC MAXIMUM RATINGTa=25 SYMBOL VCBO VEBO VCEO I I C CM PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature Ta=25 RATING 80 5 60 1 2 500 150 -55150 UNIT V V V A mW MARKING Type Name AY W LOT hFE ITEM LIMITS MIN 80 5 60 0.1 0.1 130 320 0.25 150 10 TYP MAX PC Tj Tstg ELECTRICAL CHARACTERISTICS SYMBOL V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO VCE(sat) fT Cob PARAMETER C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product Collector output capacitance TEST CONDITIONS I C=10AI E=0mA I E=10AI C=0mA I C=1mARBE= VCB=80VI E =0mA VEB=5VI C=0mA UNIT V V V A A V MHz pF VCE=4VIC=0.1A IC=500mAI B=50mA VCE=10VIE=-50mA VCB=10VIE=0mAf=1MHz ISAHAYA ELECTRONICS CORPORATION INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial TYPICIAL CHARACTERISTICS Collector dissipation-AMBIENT TEMPERTURE 1000 0.6 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA Ta=25 COMMON EMITTER OUTPUT Pcmax=0.5W Collector dissipationPc(mW) 800 Collector currentIC(A) 0.4 600 400 1.0mA 0.2 IB=0.5mA 200 0 0 40 80 120 160 AMBIENT TEMPERTURETa() 200 0 0 0.5 1 1.5 2 2.5 COLLECTOR TO EMITTER VOLTAGE VCE (V) 3 COMMON EMITTER TRANSFER 100 VCE=4V DC forward current gain VS. Collector current 1000 VCE=4V DC forward current gain hFE Ta=85 Collector currentIC(mA) Ta=85 25 -40 10 25 100 -40 1 0.1 0 0.2 0.4 0.6 0.8 1 BASE TO EMITTER VOLTAGEVBE(V) 1.2 10 0.1 1 10 100 Collector currentIC(mA) 1000 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. BASE CURRENT COLLECTOR TO EMITTERSATURATION VOLTAGEVCE(V) COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat)V) 2 1.8 1.6 0.5A IC=0.1A 0.2A 0.3A 0.4A 0.6A Ta=25 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 IC/IB=10 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.1 100 Ta=85 25 -40 10 0.1 1 10 100 COLLECTOR CURRENTIC(mA) 1000 1 10 BASE CURRENTIB(mA) 100 ISAHAYA ELECTRONICS CORPORATION INC5001AP1 For low frequency power amplify Silicon NPN Epitaxial GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 GAIN BAND WIDTH PRODUCTT (MH) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob (pF) Ta=25 VCE=10V Ta=25 IE=0mA f=1MHz 100 10 10 1 -0.1 1 -1 -10 -100 -1000 0.1 EMITTER CURRENTIE (A) 1 10 COLLECTOR TO BASE VOLTAGEVCB (V) 100 Ta=25 single pulse 10 ASO ICMmax=2A(100msec Collector currentIC (A) 1 PW=1msec ICmax=1A 10msec 100msec DC(500mW) 1sec 0.1 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGEVCE (V) ISAHAYA ELECTRONICS CORPORATION VCEmax=60V 0.01 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2009 |
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